%0 Journal Article
%4 sid.inpe.br/mtc-m21b/2014/12.22.17.30
%2 sid.inpe.br/mtc-m21b/2014/12.22.17.30.02
%@doi 10.1088/1742-6596/480/1/012039
%@issn 1742-6588
%F self-archiving-INPE-MCTI-GOV-BR
%T Transport properties of polycrystalline boron doped diamond
%D 2014
%9 conference paper
%A Santos, Nazir Monteiro dos,
%A Ferreira, Neidenei Gomes,
%A Baldan, Mauricio Ribeiro,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%B Journal of Physics: Conference Series
%V 480
%N 012039
%K boron-doped diamond.
%X Boron-Doped Diamond electrodes were produced on silicon substrate (BDD/Si) by Hot Filament Chemical Vapor Deposition reactor (HFCVD) using CH4/H2 gas mixtures. A series of experiments varying the levels of boron doping from 5000 to 25000 ppm were performed. Morphological, structural and electrochemical studies were conducted whose aim was the understanding about the film properties. The morphological and structural characterizations of these materials were made by Scanning Electron Microscopy and by Raman Scattering Spectroscopy techniques. The evaluation of the electrodes was performed using cyclic voltammetry. The electrochemical response showed the influence of boron content in the work potential window. The doped diamond films produced and characterized in this work are efficient as an electrode for environmental applications.
%@language en
%3 ArtigoNazir.pdf
%O 21st Latin American Symposium on Solid State Physics (SLAFES XXI)